QUIZ 3- SEMICONDUCTORS(PN DIODE)

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1. The depletion layer in the P-N junction region is caused by

Diffusion of charge carriers

Migration of impurity ions

Drift of electrons

Drift of holes

2. A diode is said to be in reverse bias when

N-end is at lower potential and P-end is at lower potential

N-end is at lower potential and P-end is at higher potential

N-end is at higher potential and P-end is at higher potential

N-end is at higher potential and P-end is at lower potential

3. In a PN-junction diode

The current in the reverse biased condition is small but the forward biased current is independent of the bias voltage

The reverse biased current is strongly dependent on the applied bias voltage

The forward biased current is very small in comparison to reverse biased current

The current in the reverse biased condition is generally very small~μA

4. This space-charge region on either side of the junction which contain only immobile ions and does not have any free charge carrier

Drift

Depletion layer

Diffusion

Barrier potential

5. In the forward bias arrangement of a PN-junction diode

The N-end is connected to the positive terminal of the battery

The P-end is connected to the positive terminal of the battery

The direction of current is from N-end to P-end in the diode

The P-end is connected to the negative terminal of battery

6. In an unbiased p-n junction, holes diffuses from the p-region to n-region because

free electrons in the n-region attract them.

they move across the junction by the potential difference.

hole concentration in p-region is more as compared to n-region.

All the above.

7. When a forward bias is applied to a p-n junction, it

raises the potential barrier.

reduces the majority carrier current to zero.

lowers the potential barrier.

None of the above.

8. Movement of majority charge carriers on either side of the juction due to difference in concentration.

Drift

Barrier potential

Diffusion

Depletion layer

9. The cut-in voltage for silicon diode is approximately

0.6 V

0.2 V

1.4 V

1.1 V

10. Movement of minority charge carriers on either side of a juction due to junction field.

Diffusion

Drift

Depletion layer

Barrier potential

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